"Dr. Ashish Kumar Singh has over seven years of teaching and research experience since 2017, specializing in simulation, modeling, and circuit design for low-power emerging semiconductor devices. His current research focuses on the design of biosensors using III-V compound materials and high-K gate dielectrics, along with the development of low-power analog VLSI circuits for memory applications.
He has published several SCI and SCOPUS-indexed research and review papers in reputed journals such as IEEE Transactions on Electron Devices (IF: 2.9), Applied Physics A (IF: 2.6), Semiconductor Science and Technology (IF: 1.9), Silicon Journal (IF: 2.8), Microelectronics Journal (IF: 1.9), Superlattices and Microstructures (IF: 2.6), Microelectronics Reliability (IF: 1.6), International Journal of Electronics and Communications (IF: 3.0), Solid State Electronics (IF: 1.2), Physica Scripta (IF: 2.6), and ECS Journal of Solid State Science and Technology (IF: 1.8), among others. In addition, he has authored four book chapters, four Indian patents, and one book published by Bentham Science."
Research Area
- Simulation and Modelling of Low-Power Emerging Semiconductor Devices (TFET, FinFET, etc.)
- Design of Low-Power Analog VLSI Circuits
- Application of Semiconductor Devices as Biosensors, Light Sensors, and Gas Sensors
Education
- Ph.D., IIT (BHU), Varanasi
- M.Tech., NIT Silchar, Assam
- B.Tech., KEC, Ghaziabad / UPTU
Awards
- Research Fellowship (JRF) (July 2017–July 2019) and Senior Research Fellowship (SRF) (July 2019–Present) awarded by University Grants Commission (UGC), Government of India for pursuing Ph.D.
- Best Paper Award: “Performance Investigation of a P-channel Heterojunction GaN Tunnel FET”, 2019 IEEE MTT-S International Microwave and RF Conference (IMaRC), Mumbai, India
- GATE (ECE) Qualified – 2014, 2015
- GATE Scholarship for 24 months (AY: 2015–2017) during M.Tech, awarded by MHRD, Government of India
Research Detail
- Citations: 842
- h-index: 15
- i10-index: 18
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